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silicon carbide journal process

"Heat transfer analysis of EDM process on silicon …

Journal Article Publisher Emerald Faculty Faculty of Computing, Health and Science School School of Engineering RAS ID 9077 Comments Mahdavinejad, R., Tolouei-Rad, M., & Sharifi-Bidgoli, H. (2005). Heat transfer analysis of EDM process on silicon carbide

Preparation of Continuous Silicon carbide Fiber-- …

A process was studied to make continuous silicon carbide fiber from polycarbosilane (PC) served asprecursor. The manufacture process includes the synthesis of PC, and melt spinning in an equipmentwith a nozzle of 100 holes to produce 10-15μm diameter fibers.

Polishing process for concave lightweight silicon-coated …

Advanced optical systems, currently under consideration, propose the use of lightweight, segmented, long radii elements. Reaction-bonded silicon carbide (RB SiC) is quickly becoming a contender in the materials market for these large, lightweight mirrors due, in

Hydrogen Chloride Effects on the CVD of Silicon Carbide …

H Sachdev and P Scheid, Formation of silicon carbide and silicon carbonitride by RF-plasma CVD, Diamond and Related Materials, 10, 3-7, (1160), (2001). Crossref George D. Papasouliotis and Stratis V. Sotirchos , ChemInform Abstract: Hydrogen Chloride Effects on the CVD of Silicon Carbide from Methyltrichlorosilane. , ChemInform , 30 , 5 , (2010) .

Cohort Study of Silicon Carbide Production Workers | …

Abstract Silicon carbide is produced by a chemical reaction at high temperature between free crystalline silica and petroleum coke. The process generates airborne fibers and fibrogenic dusts such as α-quartz and cristobalite, which are also potentially carcinogenic.

Heat transfer analysis of EDM process on silicon carbide …

– The purpose of the research is to analyze instability in ED machining of silicon carbide (SiC) due to heat generation in the workpiece body. The results can be used in selecting a convenient machining set up., – Various researches (1978‐2002) have shown the

Ion Implantation of Silicon Carbide (Journal Article) | …

The U.S. Department of Energy''s Office of Scientific and Technical Information @article{osti_15010385, title = {Ion Implantation of Silicon Carbide}, author = {Hallen, Anders and Janson, Martin and Kuznetsov, A Y and Aberg, A and Linnarsson, M K and Svensson, B G and Persson, P O and Carlsson, FH C and Stirasta, L and Bergman, J P and Sridhara, S G and Zhang, Yanwen}, abstractNote = {Ion

Sintered Silicon Carbide ( SiC ) Properties and Appliions

Sintered alpha silicon carbide (SiC) is produced by initially mixing fine (sub-micron) and pure silicon carbide powder with non-oxide sintering aids. The powdered material is formed or compacted by using most of the conventional ceramic forming processes such as die pressing, isostatic pressing and injection moulding.

Advances in silicon carbide filters and porous …

Journal of Merane Science The research article ''Silicon carbide filters and porous meranes: A review of processing, properties, performance and appliion'' has been pubished in Elsevier''s Journal of Merane Science (Volume 610, 1 Septeer 2020, 118193).

Silicon carbide - Book chapter - IOPscience

Silicon carbide (SiC), also commonly known as carborundum, is a compound of silicon and carbon. Apart from being an excellent abrasive, SiC is also used in the manufacture of semiconductor process equipment. SiC is a very hard material and is thermally stable

Deformation by the Stress‐Induced Transport of Helium …

Silicon carbide (SiC) containing He atoms expands by annealing above ∼ 1300 C, owing to the formation and growth of He bubbles. An external compressive stress applied during annealing retards expansion in the stress direction, while promoting it in the lateral

Fabriion of β-silicon carbide nanowires from carbon …

TY - JOUR T1 - Fabriion of β-silicon carbide nanowires from carbon powder and silicon wafer AU - Al-Ruqeishi, Majid S. AU - Mohiuddin, Tariq PY - 2016 Y1 - 2016 N2 - β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and

Effects of a modular two-step ozone-water and annealing …

@article{osti_22310940, title = {Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene}, author = {Webb, Matthew J., E-mail: [email protected] and Lundstedt, Anna and Grennberg, Helena and Polley, Craig and Niu, Yuran and Zakharov, Alexei A. and Balasubramanian, Thiagarajan and Dirscherl, Kai and Burwell, Gregory and Guy, Owen J. and …

(PDF) Advances in silicon carbide science and …

Advances in silicon carbide microfabriion and growth process optimization for silicon carbide nanostructures are ushering in new opportunities for microdevices capable of operation in a variety

New process of silicon carbide purifiion intended for …

In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purifiion intended to be used in photovoltaic appliions. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment.

Hints for neutrino-process boron in presolar silicon …

TY - JOUR T1 - Hints for neutrino-process boron in presolar silicon carbide grains from supernovae AU - Fujiya, Wataru AU - Hoppe, Peter AU - Ott, Ulrich PY - 2011/3/20 Y1 - 2011/3/20 N2 - We have studied more than 1000 presolar silicon carbide (SiC) grains

Ionization-induced annealing of pre-existing defects in …

Silicon carbide (SiC) is a wide-band gap semiconductor 1,2,3,4,5, key refractory ceramic 6,7 and radiation-tolerant structural material 8,9,10,11 that can be functionalized by ion-implantation

Silicon as a semiconductor: silicon carbide would be …

In power electronics, semiconductors are based on the element silicon – but the energy efficiency of silicon carbide would be much higher. Physicists of the University of Basel, the Paul Scherrer Institute and ABB explain what exactly is preventing the use of this coination of silicon and carbon in the scientific journal Applied Physics Letters.

Multiplicity of steady states in the codeposition of silicon …

Past studies have suggested that the process of chemical vapor deposition of SiC and C from mixtures of H. Habuka, M. Watanabe, M. Nishida, T. Sekiguchi, Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride .023, ,

Subsurface Damage in Polishing Process of Silicon …

However, the precision polishing process of silicon carbide ceramic is limited in many aspects; its process is simple, and there may be polishing subsurface damage (SSD). At present, it is common practice to investigate the polishing mechanism by establishing the models of material removal depth based on the Preston equation according to d h = k p v d t [ 5 , 6 ].

Diffusion of ion implanted aluminum in silicon carbide …

1/7/2020· Diffusion of aluminum in silicon carbide was studied by Al implantation into single crystal SiC and subsequent profile analyses by secondary ion mass spectrometry (SIMS). The bulk diffusion coefficient of Al at temperatures between 1350 and 1800 /sup 0/C …

Silicon Carbide Whisker | Scientific.Net

Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process Authors: Fan Tao Meng, Shan Yi Du, Yu Min Zhang Abstract: Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites.

Inorganic silicon carbide, Tyranno and silicon nitride …

Silicon Carbide Fibre Property Ceramic Fibre Silicon Carbonitride Silicon Carbide Fibre These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Eedded silicon carbide “replicas” patterned by rapid …

This process is a mask-free technique for patterning SiC on silicon for possible nanoelectronic appliions. Eedded silicon carbide “replicas” patterned by rapid thermal processing of DNA origami on silicon: Journal of Vacuum Science & Technology B: Vol 34, No 6

Study on the Gel Casting Process of Silicon Carbide | …

Abstract: Silicon carbide possess high performances such as high hardness and strength, oxidation and high temperature resistance, high thermal conductivity and low thermal expansion coefficient. [10] Tamari N, Kondo h I, Tanaka T, et al. Fabriion of Silicon Carbide Ceramics Added with Boron and Carbon by Spark Plasma sintering and Their Mechanical Properties, Journal of the Japan Society

Oxidation of Submicroscopic Fibrous Silicon Carbide, …

Oxidation of Submicroscopic Fibrous Silicon Carbide Oxidation of Submicroscopic Fibrous Silicon Carbide PULTZ, W. W. 1967-08-01 00:00:00 The oxidation rate of silicon carbide fibers of submicroscopic dimensions in static air was investigated by a …

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