Silicon carbide (SiC) nanowires were synthesized at 900 C by the laser ablation technique. The growth morphology, microstructure, and defects in SiC nanowires were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM).
nanowires. The results show that the silicon carbide nanowires have a core–shell structure and grow along \111[ direction. The diameter of silicon carbide nano-wires is about 50–200 nm and the length from tens to hundreds of micrometers. The vapor–solid
Abstract Silicon carbide (SiC) is recognized as one of the most important candidates of the third-generation semiconductors, owing to their superior properties such as outstanding mechanical properties, excellent chemical inertness, high thermal stability, as well as high thermal conductivity, which allow the SiC materials having the unique advantage to serve under high-temperature/high
Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal alysts Siddarth G. Sundaresan,†,‡ Albert V. Davydov,‡ Mark D. Vaudin,‡ Igor Levin,‡ James E. Maslar,‡ Yong-Lai Tian, and Mulpuri V. Rao*,†
Single crystalline silicon carbide nanowires (SiCNWs) growing along direction were synthesized on a carbon nanotube (CNT) template. A powder mixture of silicon monoxide (SiO) and iron (II) phthalocyanine, FeC32N8H16, (FePc) was mechanically ball milled and followed by thermal annealing at 1200 °C for 1 hour.
The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires coine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual
Tuning the radial structure of core–shell silicon carbide nanowires
14/9/2015· Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC …
We demonstrate the ability to synthesize graphitic carbon sheets around cubic silicon carbide nanowires via an alloy-mediated alytic process. The transmission electron microscopy analysis shows multilayer graphitic carbon sheets with a large interatomic layer distance of ∼0.45 nm, suggesting the presence of oxygen in the graphitic system.
functionalized nanowires (NWs) are ideal active elements for such biosensors due to their high surface-to-volume ratio.5,6 Intermsofmaterialssystems,silicon(Si)andsilicon carbide (SiC) are attractive semiconductors for inclusion in biosensing devices due to their
1/1/2009· For the manufacture of Silicon carbide Nanowires, carbon nanotubes are mixed with nanosize silicon powder and then the mix is heated under argon atmosphere at normal pressure in a furnace for several hours. Specimens are then oxidized to remove the excess of
Extended Vapor–Liquid–Solid Growth of Silicon Carbide Nanowires
Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical appliions. SEM images of SiC nanowires prior to wet-oxidation. H.-P. Phan et al./Materials Letters 196 (2017) 280–283 281
Silicon carbide or carborundum isolated on white background. Is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral The beautifully shaped crystals of a lump of black silicon carbide focus stacking. The beautifully
In present paper, the stability analysis of boron nitride and silicon carbide nanotubes/nanowires is investigated using different size effective theories, finite element method, and computer software. Size effective theories used in paper are modified couple stress
Abstract In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition (CVD) at relatively low temperatures. 3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates, and the nanowires are 20–80 nm in diameter and several µm in length, with a growth
Silicon carbide nanowires with junctions are considered to be of potential value in nanoelectronics. A simple method by alyst-assisted vapor-liquid-solid reaction for producting Y-junction silicon carbide nanowires is described. The Y-junction silicon carbide
Individual spins, associated with vacancies in the silicon carbide lattice, have been observed and coherently manipulated. This may offer new directions for integrated spintronic devices.
Synthesis of Silicon Carbide Nanowires from a Hybrid of Amorphous Biopolymer and Solâ Gel-Derived Silica
A silicon carbide nanowire having excellent characteristics is provided by a simple synthesis method / apparatus using a safe substance as a raw material and capable of mass production. The constituent material of the raw material powder includes at least Si or
Silicon carbide nanowires have been extensively studied because of their unique physical and chemical properties. They can be applied in high temperature, high frequency, high power, and corrosive environments, and have a wide range of appliions in electronics
Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide (SiC) nanowires. We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the  and  directions. The formation energies of these clusters were calculated as a function of the carbon concentration. We verified that the
SiC nanowires were prepared by using a thermal evaporation process based on the silicon powder precursor in an upright graphite furnace presented as followed. 25 25. J. J. Chen, Q. Shi, and W. H. Tang, Mater. Chem. Phys. 126(3), 655 (2011).
This work reports a bioinspired anisotropic nanocomposite by polar solution assisted mechanical stretching method, consisting of polyvinyl alcohol (PVA) and silicon carbide nanowires (SiCNWs) with aligned morphology in one direction. Inspired by the structural
TY - JOUR T1 - Silicon carbide nanowires under external loads T2 - An atomistic simulation study AU - Makeev, Maxim A. AU - Srivastava, Deepak AU - Menon, Madhu PY - 2006/10/11 Y1 - 2006/10/11 N2 - The nanomechanical response properties of 3C-SiC
Silicon carbide nanowires have been synthesized at 1400 C by carbothermic reduction of silica with baoo carbon under normal atmosphere pressure without metallic alyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires.